Use of atomic-force microscopy and of a parallel irradiation geometry for in-depth characterization of damage produced by swift Kr ions in silicon

Silicon samples were irradiated with 209 MeV Kr ions in a direction parallel with the (100) plane. The variation vs distance from the irradiated edge, the (010) plane, i.e., vs depth, of the defects produced by the irradiation was evaluated without any sample preparation by atomic-force microscopy (AFM) and spreading resistance measurement on the (100) plane. Both methods indicate a penetration depth of 28 mu m, in good agreement with the value given by Monte Carlo (TRIM) range calculation. AFM measurements allowed distinction between four depth zones to which different damage production mechanisms can be ascribed.