Effects of Li and Mg doping on microstructure and properties of sol-gel ZnO thin films

被引：134

作者：

Fujihara, S ^{[1
]}

Sasaki, C ^{[1
]}

Kimura, T ^{[1
]}

机构：

[1] Keio Univ, Fac Sci & Technol, Dept Appl Chem, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2001年 / 21卷 / 10-11期

关键词：

electrical properties; films; grain growth; sol-gel processes; ZnO;

D O I：

10.1016/S0955-2219(01)00182-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Zinc oxide thin films doped with Li and Mg were prepared by the sol-gel method, and effects of doping on microstructure and electrical properties were examined. The doped films exhibited c-axis-orientation after final heating at 500 degreesC for 30 min in flowing oxygen. The ZnO crystallite size increased by doping and the surface of the films became rougher. The current density of the films was reduced by doping probably due to the formation of acceptor levels (Li-doping) and the reduction of oxygen defects (Mg-doping). The film with a nominal composition of Zn0.85Li0.10Mg0.05O showed the lowest current density of 1.7 x 10(-6) A cm(-2) in the present study. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：2109 / 2112

页数：4

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