Preparation of Al- and Li-doped ZnO thin films by sol-gel method

被引：11

作者：

Fujihara, S ^{[1
]}

Sasaki, C ^{[1
]}

Kimura, T ^{[1
]}

机构：

[1] Keio Univ, Fac Sci & Technol, Dept Appl Chem, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan

来源：

ELECTROCERAMICS IN JAPAN III | 2000年 / 181-1卷

关键词：

Al doping; I-V characteristic; Li doping; sol-gel; thin film; ZnO;

D O I：

10.4028/www.scientific.net/KEM.181-182.109

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Conducting Al-doped ZnO and insulating Li-doped ZnO thin films were prepared by the sol-gel method. All the films exhibited c-axis-orientation perpendicular to substrates. The crystallite size of ZnO monotonically decreased with increasing the dopant concentration. Doping 1mol% of Al in the ZnO film minimized the sheet resistance on the order of 0.5 M Omega square (-1). The conducting behavior of the Li-doped ZnO film was found to depend greatly on the heat-treatment temperature. The current density of 3x10(-6) and 1x10(-3) Acm(-2) at an applied voltage of 5 V was observed for the 10mol% Li-doped ZnO films heat-treated at 500 and 600 degreesC, respectively.

引用

页码：109 / 112

页数：4

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