Fabrication and characterization of low turn-on voltage carbon nanotube field emission triodes

被引：4

作者：

Cheng, HC ^{[1
]}

Chen, KJ

Hong, WK

Tantair, FG

Lin, CP

Chen, KH

Chen, LC

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30039, Taiwan

[3] Acad Sinica, Inst Atom & Mol Sci, Taipei, Taiwan

[4] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10764, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2001年 / 4卷 / 08期

关键词：

D O I：

10.1149/1.1381349

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Based on selective growth, carbon nanotubes (CNTs) for low turn-on voltage field emission triodes have been grown via microwave plasma-enhanced chemical vapor deposition. The triode devices fabricated with standard integrated circuit process contain 4 x 4 emitting cells with extraction gates and each individual cell is 4 mum in diameter. With the phosphor-coated indium tin oxide glass as the anode away from the CNTs triodes with similar to1 mm above, the triode devices achieved low turn-on gate voltage of 30 V and high emission current density of 0.7 A/cm(2) at 50 V. The results exhibit CNTs for potential application in field emission display. (C) 2001 The Electrochemical Society.

引用

页码：H15 / H17

页数：3

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