Electrical properties of the stacked ZnS/photo-enhanced native oxide passivation for long wavelength HgCdTe photodiodes

被引：20

作者：

Lin, CT ^{[1
]}

Su, YK ^{[1
]}

Huang, ET ^{[1
]}

Chang, SJ ^{[1
]}

Chen, GS ^{[1
]}

Sun, TP ^{[1
]}

Luo, JJ ^{[1
]}

机构：

[1] CHUNG SHAN INST SCI & TECHNOL,LUNGTAN,TAIWAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 05期

关键词：

D O I：

10.1109/68.491592

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new surface treatment ZnS/photo-enhanced native oxide, is passivation, The photo native oxide layer was deposited by direct photo chemical vapor deposition (DPCVD) using a deuterium (D-2) lamp as the optical source, By using this method, we found that there is no accumulation of Hg in the oxide/HgCdTe interface regions, Since the photo chemical vapor native oxidation is a dry oxidation method deposited at a low temperature, it can effectively suppress the Hg enhancement and the Cd depletion effects and thus obtain a high quality interface. The electrical properties of a Au-ZnS/photo-enhanced native oxide/HgCdTe metal-insulator-semiconductor (MIS) diodes were characterized by capacitance-voltage (C-V) measurement. It was found that the flat band voltage of such a MIS diode is close to 0.2 V with an effective fixed oxide charge lower than 1 x 10(10) cm(-2).

引用

页码：676 / 678

页数：3

共 8 条

[1] ELECTRICAL-PROPERTIES OF EPITAXIALLY GROWN CDTE PASSIVATION FOR LONG-WAVELENGTH HGCDTE PHOTODIODES [J].