Calculation of elastic constants in defected and amorphous silicon by quantum simulations

被引：20

作者：

DeSandre, G

Colombo, L

Bottani, C

机构：

[1] UNIV MILAN,DIPARTIMENTO FIS,I-20133 MILAN,ITALY

[2] POLITECN MILAN,IST NAZL FIS MAT,I-20133 MILAN,ITALY

[3] POLITECN MILAN,DIPARTIMENTO INGN NUCL,I-20133 MILAN,ITALY

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.54.11857

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a quantum-mechanical calculation of finite-temperature elastic constants in silicon based on tight-binding molecular dynamics. We investigate amorphous silicon as obtained from the melt, and the evolution of elastic constants in silicon during ion implantation. The effect of post-implantation thermal annealing is also presented and discussed.

引用

页码：11857 / 11860

页数：4

共 21 条

[1]

BARONI S, 1987, PHYS REV LETT, V59, P1665

[2] ELASTIC PROPERTIES OF SI DURING AMORPHIZATION [J].

BHADRA, R ;

PEARSON, J ;

OKAMOTO, P ;

REHN, L ;

GRIMSDITCH, M .

PHYSICAL REVIEW B, 1988, 38 (17) :12656-12659

[3]

CHEN AB, 1992, SEMICONDUCTOR SEMIME, V37

[4] DEFECT-INDUCED AMORPHIZATION IN SILICON [J].

COLOMBO, L ;

MARIC, D .

EUROPHYSICS LETTERS, 1995, 29 (08) :623-628

[5]

COLOMBO L, 1996, ANN REV COMPUTATIONA, V4

[6] GENERATING TRANSFERABLE TIGHT-BINDING PARAMETERS - APPLICATION TO SILICON [J].

GOODWIN, L ;

SKINNER, AJ ;

PETTIFOR, DG .

EUROPHYSICS LETTERS, 1989, 9 (07) :701-706

[7]

Grimvall G., 1986, THERMOPHYSICAL PROPE

[8] ELASTIC-CONSTANTS AND HARDNESS OF ION-BEAM-SPUTTERED TINX FILMS MEASURED BY BRILLOUIN-SCATTERING AND DEPTH-SENSING INDENTATION [J].

JIANG, X ;

WANG, M ;

SCHMIDT, K ;

DUNLOP, E ;

HAUPT, J ;

GISSLER, W .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) :3053-3057

[9] ELASTIC-CONSTANTS AND DENSITY OF STATES OF A MOLECULAR-DYNAMICS MODEL OF AMORPHOUS-SILICON [J].

KLUGE, MD ;

RAY, JR .

PHYSICAL REVIEW B, 1988, 37 (08) :4132-4136

[10] MOLECULAR DYNAMIC CALCULATION OF ELASTIC-CONSTANTS OF SILICON [J].

KLUGE, MD ;

RAY, JR ;

RAHMAN, A .

JOURNAL OF CHEMICAL PHYSICS, 1986, 85 (07) :4028-4031

← 1 2 3 →