Metal-insulator transitions and the effects of electron-electron interactions in two-dimensional electron systems

被引：81

作者：

Shashkin, AA ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Moscow 142432, Russia

来源：

PHYSICS-USPEKHI | 2005年 / 48卷 / 02期

关键词：

D O I：

10.1070/PU2005v048n02ABEH001944

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Experimental results on metal-insulator transitions and the anomalous properties of strongly interacting two-dimensional electron systems are reviewed and critically analyzed. Special attention is given to recent results on strongly enhanced spin susceptibility and effective mass in low-disordered silicon MOSFETs.

引用

页码：129 / 149

页数：21

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