Selective area mass transport regrowth of gallium nitride

被引：10

作者：

Heikman, S ^{[1
]}

DenBaars, SP

Mishra, UK

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 2A期

关键词：

GaN; regrowth; mass transport; anneal;

D O I：

10.1143/JJAP.40.565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Selective area mass transport regrowth of GaN was performed on wafers with etched wells and SiO2 mask. The samples were annealed in NH3 and H-2 flow, with no gallium precursor. At 1060 degreesC, only little mass transport occured, but the sidewall morphology changed, depending on crystallographic orientation At 1160 degreesC, the sidewalls grew out about 1 mum in 1 min, independent of orientation. The technique can potentially be performed in an annealing chamber, providing a low cost regrowth process. A promising application is ohmic contact regrowth to high composition AlGaN/GaN high electron mobility transistors.

引用

页码：565 / 566

页数：2

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