Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers

被引：119

作者：

Smorchkova, IP ^{[1
]}

Keller, S

Heikman, S

Elsass, CR

Heying, B

Fini, P

Speck, JS

Mishra, UK

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 24期

关键词：

D O I：

10.1063/1.1332408

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Plasma-assisted molecular-beam epitaxy is used to grow a set of two-dimensional electron-gas AlN/GaN structures with AlN barrier thicknesses varied between 24 and 50 Angstrom. The density of the two-dimensional electron gas formed at the GaN/AlN interface increases from 1.51x10(13) cm(-2) for the AlN barrier width of 24 Angstrom to 3.65x10(13) cm(-2) for the AlN barrier width of 49 Angstrom. The increase in the electron sheet density is accompanied by a decrease in electron mobility related to tensile strain relaxation and enhanced interface roughness scattering. It is shown that room-temperature sheet resistances below 200 Omega/square can be achieved in AlN/GaN high electron mobility transistor structures with 35-45 Angstrom AlN barriers. (C) 2000 American Institute of Physics. [S0003-6951(00)00851-2].

引用

页码：3998 / 4000

页数：3

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