Synthesis of Si-Ge oxide nanowires via the transformation of Si-Ge thin films with self-assembled Au catalysts

被引:6
作者
He, JH [1 ]
Wu, TH
Hsin, CL
Chen, LJ
Wang, ZL
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan
[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
关键词
D O I
10.1149/1.2001792
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A technique has been developed to transform a Si-Ge thin film into Si-Ge oxide nanowires with the assistance of Au particles through a three-step annealing process. A honeycomb network of Au colloidal nanoparticles was self-assembled; 400 degrees C annealing removes the surface surfactant; 800 degrees C annealing forms hexagonally self-assembled Au particles on the thin-film surface; finally, a 1075 degrees C annealing results in the growth of oxide nanowires on the surfaces of Au particles. Synthesized nanowires have an emission peak at 3.3 eV. This technique is useful for growing silicon oxide nanowires with a tunable amount of Ge doping. (c) 2005 The Electrochemical Society.
引用
收藏
页码:G254 / G257
页数:4
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