Stress-induced grain boundary migration in polycrystalline copper

被引：10

作者：

Bloomfield, Max O. ^{[1
]}

Bentz, Daniel N. ^{[1
]}

Cale, Timothy S. ^{[2
]}

机构：

[1] Rensselaer Polytech Inst, Focus Ctr New York Rensselaer Interconnect Hyperi, Troy, NY 12180 USA

[2] Arizona State Univ, Sch Mat, Tempe, AZ 85287 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2008年 / 37卷 / 03期

关键词：

polycrystalline copper; grain continuum modeling; elastic anisotropy; interconnects; PLENTE;

D O I：

10.1007/s11664-007-0354-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We use three-dimensional (3D) grain-continuum models to study grain boundary migration, treating each grain with anisotropic elastic properties. Grain boundary speeds are computed using a finite element method to calculate differences in strain energy density across grain boundaries. Body-fitted finite element meshes are used. An interface tracking program, PLENTE, is used to develop starting structures and move the grain boundaries based on these speeds. We demonstrate this procedure on textured films consisting of [100] and [111] fiber textured film. We also apply the model to a short section of a Cu line embedded in oxide. We conclude with a discussion on the relative impact of different driving forces for grain boundary motion.

引用

页码：249 / 263

页数：15

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