Formation and evolution of grain structures in thin films

被引：17

作者：

Bloomfield, MO ^{[1
]}

Cale, TS ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Rensselaer Interconnects Hyperintegrat, Focus Ctr New York, Troy, NY 12180 USA

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 76卷 / 1-4期

关键词：

microstructure; thin film deposition; self-annealing; grain continuum; level set method; computer simulation; encapsulation;

D O I：

10.1016/j.mee.2004.07.054

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe an approach to studying grain structure formation and evolution in polycrystalline thin films using a "grain continuum" representation of the solid. Formation and evolution of grain structure are tracked using level-set-based geometry software we call PLENTE. We demonstrate the approach using two processes; (1) vapor deposition and (2) grain boundary migration during curvature-driven coarsening. We employ several codes in concert to track the development of grains during deposition while accounting for reaction kinetics, ballistic transport, and re-emission of reactive species. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：195 / 204

页数：10

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