FREE MOLECULAR-TRANSPORT AND DEPOSITION IN CYLINDRICAL FEATURES

被引：55

作者：

CALE, TS ^{[1
]}

RAUPP, GB ^{[1
]}

机构：

[1] ARIZONA STATE UNIV, CTR SOLID STATE ELECTR RES, TEMPE, AZ 85287 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.584990

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：649 / 655

页数：7

共 19 条

[1] STEP COVERAGE SIMULATION AND MEASUREMENT IN A DC PLANAR MAGNETRON SPUTTERING SYSTEM
BLECH, IA
VANDERPLAS, HA
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3489 - 3496
[2] CALE TS, 1989, TUNGSTEN OTHER REFRA, V4, P183
[3] PREDICTION OF STEP COVERAGE DURING BLANKET CVD TUNGSTEN DEPOSITION IN CYLINDRICAL PORES
CHATTERJEE, S
MCCONICA, CM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (01) : 328 - 335
[4] MONTE-CARLO SIMULATION OF THIN-FILM DEPOSITION IN A RECTANGULAR GROOVE
COOKE, MJ
HARRIS, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (06): : 3217 - 3221
[5] Delves LM, 1985, COMPUTATIONAL METHOD
[6] THE STEP COVERAGE OF UNDOPED AND PHOSPHORUS-DOPED SIO2 GLASS-FILMS
LEVIN, RM
EVANSLUTTERODT, K
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 54 - 61
[7] MCCONICA CM, 1988, TUNGSTEN OTHER REFRA, V3, P257
[8] MCCONICA CM, 1988, 5TH IEEE VLSI MULT I
[9] PATTERSON GN, 1971, INTRO KINETIC THEORY
[10] Step Coverage Prediction in Low-Pressure Chemical Vapor Deposition
Raupp, G. B.
Cale, T. S.
[J]. CHEMISTRY OF MATERIALS, 1989, 1 (02) : 207 - 214