FREE MOLECULAR-TRANSPORT AND DEPOSITION IN CYLINDRICAL FEATURES

被引：55

作者：

CALE, TS ^{[1
]}

RAUPP, GB ^{[1
]}

机构：

[1] ARIZONA STATE UNIV, CTR SOLID STATE ELECTR RES, TEMPE, AZ 85287 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.584990

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：649 / 655

页数：7

共 19 条

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RILEY, PE
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CASTEL, ED
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[J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 239 - 240
[14] SCHMITZ JEJ, 1988, TUNGSTEN OTHER REFRA, V3, P55
[15] SCHMITZ JEJ, 1989, SEP WORKSH CVD TUNGS
[16] IMPLICATIONS OF RAPID THERMAL-PROCESSING FOR STEP COVERAGE IN LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
SHEMANSKY, FA
JAIN, MK
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RAUPP, GB
[J]. RAPID THERMAL ANNEALING / CHEMICAL VAPOR DEPOSITION AND INTEGRATED PROCESSING, 1989, 146 : 173 - 178
[17] Skidmore K., 1988, SEMICOND INT, V11, P40
[18] SZE SM, 1983, VLSI TECHNOLOGY, P111
[19] A STUDY ON RADICAL FLUXES IN SILANE PLASMA CVD FROM TRENCH COVERAGE ANALYSIS
YUUKI, A
MATSUI, Y
TACHIBANA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (02): : 212 - 218