Thin semiconducting layers as active and passive emitters for thermophotonics and thermophotovoltaics

被引：5

作者：

Catchpole, KR ^{[1
]}

Lin, KL ^{[1
]}

Green, MA ^{[1
]}

Aberle, AG ^{[1
]}

Corkish, R ^{[1
]}

Zhao, J ^{[1
]}

Wang, A ^{[1
]}

机构：

[1] Univ New S Wales, Ctr Excellence Adv Silicon Photovolta & Photon, Sydney, NSW 2052, Australia

来源：

SOLAR ENERGY | 2004年 / 76卷 / 1-3期

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1016/j.solener.2003.09.008

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Thermophotovoltaics involves the photovoltaic conversion by a receiver cell of radiation from an emitter, which could be heated by various sources including sunlight. A prime difference from normal solar photovoltaics is that emitted energy unable to be used by the receiver can, in principle, be recycled allowing high conversion efficiency. Thermophotonics is a recent development of this concept where the emitter is "active", namely a heated diode, increasing the rate of energy transfer for a given emitter temperature and concentrating emission in an energy range more suited for conversion by the receiver. This paper evaluates thin semiconducting layers as emitters for thermophotovoltaics and thermophotonics. It is shown that thermophotonics avoids a major challenge for thermophotovoltaics: the sensitive dependence of system efficiency on the recycling of below bandgap radiation. Possible ways of achieving the high external quantum efficiency light-emitting diode required for thermophotonics are discussed. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：251 / 254

页数：4

共 6 条

[1]

DOUSMANIS, 1964, PHYS REV, V133, pA316

[2] External radiative quantum efficiency of 96% from a GaAs/GaInP heterostructure [J].

Gauck, H ;

Gfroerer, TH ;

Renn, MJ ;

Cornell, EA ;

Bertness, KA .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1997, 64 (02) :143-147

[3] Efficient silicon light-emitting diodes [J].

Green, MA ;

Zhao, JH ;

Wang, AH ;

Reece, PJ ;

Gal, M .

NATURE, 2001, 412 (6849) :805-808

[4] Third generation photovoltaics: Ultra-high conversion efficiency at low cost [J].

Green, MA .

PROGRESS IN PHOTOVOLTAICS, 2001, 9 (02) :123-135

[5] ULTRAHIGH SPONTANEOUS EMISSION QUANTUM EFFICIENCY, 99.7-PERCENT INTERNALLY AND 72-PERCENT EXTERNALLY, FROM ALGAAS/GAAS/ALGAAS DOUBLE HETEROSTRUCTURES [J].

SCHNITZER, I ;

YABLONOVITCH, E ;

CANEAU, C ;

GMITTER, TJ .

APPLIED PHYSICS LETTERS, 1993, 62 (02) :131-133

[6] 40% efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography [J].

Windisch, R ;

Dutta, B ;

Kuijk, M ;

Knobloch, A ;

Meinlschmidt, S ;

Schoberth, S ;

Kiesel, P ;

Borghs, G ;

Döhler, GH ;

Heremans, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (07) :1492-1498

← 1 →