Theoretical study of substitution effects on molecular reorganization energy in organic semiconductors

被引:62
作者
Geng, Hua [1 ,2 ]
Niu, Yingli [1 ]
Peng, Qian [1 ]
Shuai, Zhigang [1 ,3 ]
Coropceanu, Veaceslav [4 ,5 ]
Bredas, Jean-Luc [4 ,5 ]
机构
[1] Chinese Acad Sci, Inst Chem, BNLMS, Key Lab Organ Solids, Beijing 100190, Peoples R China
[2] Chinese Acad Sci, Grad Univ, Beijing 100190, Peoples R China
[3] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
[4] Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA
[5] Georgia Inst Technol, Ctr Organ Photon & Elect, Atlanta, GA 30332 USA
基金
中国国家自然科学基金;
关键词
CHARGE-TRANSPORT PARAMETERS; HOLE TRANSPORT; FIELD; ELECTRON; MOBILITY; DESIGN; PERFLUORINATION; TRANSISTORS;
D O I
10.1063/1.3632105
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Chemical substitutions are powerful molecular design tools to enhance the performance of organic semiconductors, for instance, to improve solubility, intermolecular stacking, or film quality. However, at the microscopic level, substitutions in general tend to increase the molecular reorganization enemy and thus decrease the intrinsic charge-carrier mobility. Through density functional theory calculations, we elucidate strategies that could be followed to reduce the reorganization energy upon chemical substitution. Specific examples are given here for hole-transport materials including indolocarbazoles and several triarylamine derivatives. Through decomposition of the total reorganization energy into the internal coordinate space, we are able to identify the molecular segment that provides the most important contributions to the reorganization energy. It is found that when substitution reduces (enhances) the amplitude of the relevant frontier molecular orbital in that segment, the total reorganization energy decreases (increases). In particular, chlorination at appropriate positions can significantly reduce the reorganization energy. Several other substituents are shown to play a similar role, to a greater or lesser extent. (C) 2011 American Institute of Physics. [doi:10.1063/1.3632105]
引用
收藏
页数:7
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