NiO thin-film formaldehyde gas sensor

被引：370

作者：

Dirksen, JA

Duval, K

Ring, TA ^{[1
]}

机构：

[1] Univ Utah, Dept Chem & Fuels Engn, Salt Lake City, UT 84112 USA

[2] Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2001年 / 80卷 / 02期

关键词：

formaldehyde sensor; nickel oxide; thin-film; oxide semiconductor;

D O I：

10.1016/S0925-4005(01)00898-X

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The suitability of both pure and Li-doped NiO as a thin-film resistive gas sensor for formaldehyde has been investigated. Pure NiO had a linear formaldehyde sensitivity of 0.825 mV ppm(-1) while that for 0.5 at.% Li-doped NiO was 0.488 mV ppm(-1) at 600 degreesC. These gas-sensing materials also showed similar sensitivity for methanol and acetone as well as a reduced sensitivity for toluene and ethanol. Chloroform was a poison for these gas-sensing materials. Due to resistive noise, the detection limit for formaldehyde was found to be approximate to 40 ppm. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：106 / 115

页数：10