EBIC observation of n-GaN grown on sapphire substrates by MOCVD

被引：13

作者：

Yamamoto, K

Ishikawa, H

Egawa, T

Jimbo, T

Umeno, M

机构：

[1] Nagoya Inst Technol, Dept Elect & Comp Engn, Showa Ku, Nagoya, Aichi 466, Japan

[2] Nagoya Inst Technol, Res Ctr Microstruct Devices, Showa Ku, Nagoya, Aichi 466, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

Si-doped GaN; Schottky diodes; EBIC; etch pit density; nonradiative recombination; defect;

D O I：

10.1016/S0022-0248(98)00203-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Si-doped GaN layers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by using electron beam-induced current (EBIC) and molten KOH etching. Dark spot densities in EBIC image are be 1.0 and 1.2 x 10(8) cm(-2) depending on the accelerating voltage. The dark spots in EBIC image correspond to recombination centers. When we compare dark spot density with etch pit density revealed molten KOH, this is the same order as the EPD revealed by molten KOH. We confirm there are many dislocations which influence recombination of minority carriers in the layers. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：575 / 579

页数：5

共 6 条

[1] ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN SINGLE CRYSTALS [J].