Dislocation etch pits in GaN epitaxial layers grown on sapphire substrates

被引：58

作者：

Kozawa, T ^{[1
]}

Kachi, T ^{[1
]}

Ohwaki, T ^{[1
]}

Taga, Y ^{[1
]}

Koide, N ^{[1
]}

Koike, M ^{[1
]}

机构：

[1] TOYODA GOSEI CO LTD,AICHI 452,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1996年 / 143卷 / 01期

关键词：

D O I：

10.1149/1.1836377

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Dislocations in GaN epitaxial layers grown on sapphire substrates have been studied by chemical etching. We have examined molten KOH as a defect etchant and characterized the etch pits on GaN layers. By use of molten KOH etching, etch pits were revealed on the surface of the GaN layer. All pits were hexagonal pyramids, which reflect the crystal symmetry of GaN. Results showed that molten KOH etching might be a useful method for the evaluation of the dislocations in GaN layers. The etch pit density (EPD) was typically 2 x 10(7) cm(-2).

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页码：L17 / L19

页数：3

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