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DIFFERENT ETCH PIT SHAPES REVEALED BY MOLTEN KOH ETCHING ON THE (001) GAAS SURFACE AND THEIR DEPENDENCE ON THE BURGERS VECTORS
被引:5
作者
:
ISHIDA, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,OPTOELECTR RES LAB,MIYAMAE KU,KAWASAKI 213,JAPAN
NIPPON ELECT CO LTD,OPTOELECTR RES LAB,MIYAMAE KU,KAWASAKI 213,JAPAN
ISHIDA, K
[
1
]
KAWANO, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,OPTOELECTR RES LAB,MIYAMAE KU,KAWASAKI 213,JAPAN
NIPPON ELECT CO LTD,OPTOELECTR RES LAB,MIYAMAE KU,KAWASAKI 213,JAPAN
KAWANO, H
[
1
]
机构
:
[1]
NIPPON ELECT CO LTD,OPTOELECTR RES LAB,MIYAMAE KU,KAWASAKI 213,JAPAN
来源
:
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
|
1986年
/ 98卷
/ 01期
关键词
:
D O I
:
10.1002/pssa.2210980119
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:175 / 181
页数:7
相关论文
共 6 条
[1]
DISLOCATION ETCH PITS IN SINGLE CRYSTAL GAAS
[J].
GRABMAIER, JG
论文数:
0
引用数:
0
h-index:
0
GRABMAIER, JG
;
WATSON, CB
论文数:
0
引用数:
0
h-index:
0
WATSON, CB
.
PHYSICA STATUS SOLIDI,
1969,
32
(01)
:K13
-+
[2]
TEM STUDY OF DARK LINE DEFECT GROWTH FROM DISLOCATION CLUSTERS IN (GAA1)AS-GAAS DOUBLE HETEROSTRUCTURE LASERS
[J].
ISHIDA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratories, Nippon Electric Company, Ltd., Kawasaki
ISHIDA, K
;
KAMEJIMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratories, Nippon Electric Company, Ltd., Kawasaki
KAMEJIMA, T
.
JOURNAL OF ELECTRONIC MATERIALS,
1979,
8
(01)
:57
-73
[3]
ETCH PIT OBSERVATION OF VERY THIN [001]-GAAS LAYER BY MOLTEN KOH
[J].
ISHII, M
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LABS,ITAMI,HYOGO,JAPAN
MITSUBISHI ELECT CORP,CENT RES LABS,ITAMI,HYOGO,JAPAN
ISHII, M
;
HIRANO, R
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LABS,ITAMI,HYOGO,JAPAN
MITSUBISHI ELECT CORP,CENT RES LABS,ITAMI,HYOGO,JAPAN
HIRANO, R
;
KAN, H
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LABS,ITAMI,HYOGO,JAPAN
MITSUBISHI ELECT CORP,CENT RES LABS,ITAMI,HYOGO,JAPAN
KAN, H
;
ITO, A
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LABS,ITAMI,HYOGO,JAPAN
MITSUBISHI ELECT CORP,CENT RES LABS,ITAMI,HYOGO,JAPAN
ITO, A
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1976,
15
(04)
:645
-650
[4]
Kawano H., UNPUB
[5]
DEFECT STRUCTURE INTRODUCED DURING OPERATION OF HETEROJUNCTION GAAS LASERS
[J].
PETROFF, P
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PETROFF, P
;
HARTMAN, RL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
HARTMAN, RL
.
APPLIED PHYSICS LETTERS,
1973,
23
(08)
:469
-471
[6]
DISLOCATIONS IN VAPOR-PHASE EPITAXIAL GAP
[J].
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS, PALO ALTO, CA 94304 USA
HEWLETT PACKARD LABS, PALO ALTO, CA 94304 USA
STRINGFELLOW, GB
;
LINDQUIST, PF
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS, PALO ALTO, CA 94304 USA
HEWLETT PACKARD LABS, PALO ALTO, CA 94304 USA
LINDQUIST, PF
;
CASS, TR
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS, PALO ALTO, CA 94304 USA
HEWLETT PACKARD LABS, PALO ALTO, CA 94304 USA
CASS, TR
;
BURMEISTER, RA
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS, PALO ALTO, CA 94304 USA
HEWLETT PACKARD LABS, PALO ALTO, CA 94304 USA
BURMEISTER, RA
.
JOURNAL OF ELECTRONIC MATERIALS,
1974,
3
(02)
:497
-515
←
1
→
共 6 条
[1]
DISLOCATION ETCH PITS IN SINGLE CRYSTAL GAAS
[J].
GRABMAIER, JG
论文数:
0
引用数:
0
h-index:
0
GRABMAIER, JG
;
WATSON, CB
论文数:
0
引用数:
0
h-index:
0
WATSON, CB
.
PHYSICA STATUS SOLIDI,
1969,
32
(01)
:K13
-+
[2]
TEM STUDY OF DARK LINE DEFECT GROWTH FROM DISLOCATION CLUSTERS IN (GAA1)AS-GAAS DOUBLE HETEROSTRUCTURE LASERS
[J].
ISHIDA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratories, Nippon Electric Company, Ltd., Kawasaki
ISHIDA, K
;
KAMEJIMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratories, Nippon Electric Company, Ltd., Kawasaki
KAMEJIMA, T
.
JOURNAL OF ELECTRONIC MATERIALS,
1979,
8
(01)
:57
-73
[3]
ETCH PIT OBSERVATION OF VERY THIN [001]-GAAS LAYER BY MOLTEN KOH
[J].
ISHII, M
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LABS,ITAMI,HYOGO,JAPAN
MITSUBISHI ELECT CORP,CENT RES LABS,ITAMI,HYOGO,JAPAN
ISHII, M
;
HIRANO, R
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LABS,ITAMI,HYOGO,JAPAN
MITSUBISHI ELECT CORP,CENT RES LABS,ITAMI,HYOGO,JAPAN
HIRANO, R
;
KAN, H
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LABS,ITAMI,HYOGO,JAPAN
MITSUBISHI ELECT CORP,CENT RES LABS,ITAMI,HYOGO,JAPAN
KAN, H
;
ITO, A
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LABS,ITAMI,HYOGO,JAPAN
MITSUBISHI ELECT CORP,CENT RES LABS,ITAMI,HYOGO,JAPAN
ITO, A
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1976,
15
(04)
:645
-650
[4]
Kawano H., UNPUB
[5]
DEFECT STRUCTURE INTRODUCED DURING OPERATION OF HETEROJUNCTION GAAS LASERS
[J].
PETROFF, P
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PETROFF, P
;
HARTMAN, RL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
HARTMAN, RL
.
APPLIED PHYSICS LETTERS,
1973,
23
(08)
:469
-471
[6]
DISLOCATIONS IN VAPOR-PHASE EPITAXIAL GAP
[J].
STRINGFELLOW, GB
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS, PALO ALTO, CA 94304 USA
HEWLETT PACKARD LABS, PALO ALTO, CA 94304 USA
STRINGFELLOW, GB
;
LINDQUIST, PF
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS, PALO ALTO, CA 94304 USA
HEWLETT PACKARD LABS, PALO ALTO, CA 94304 USA
LINDQUIST, PF
;
CASS, TR
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS, PALO ALTO, CA 94304 USA
HEWLETT PACKARD LABS, PALO ALTO, CA 94304 USA
CASS, TR
;
BURMEISTER, RA
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS, PALO ALTO, CA 94304 USA
HEWLETT PACKARD LABS, PALO ALTO, CA 94304 USA
BURMEISTER, RA
.
JOURNAL OF ELECTRONIC MATERIALS,
1974,
3
(02)
:497
-515
←
1
→