DISLOCATIONS IN VAPOR-PHASE EPITAXIAL GAP

被引：55

作者：

STRINGFELLOW, GB ^{[1
]}

LINDQUIST, PF ^{[1
]}

CASS, TR ^{[1
]}

BURMEISTER, RA ^{[1
]}

机构：

[1] HEWLETT PACKARD LABS, PALO ALTO, CA 94304 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1974年 / 3卷 / 02期

关键词：

D O I：

10.1007/BF02652954

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：497 / 515

页数：19

相关论文

共 33 条

[1] DISLOCATIONS AND PRECIPITATES IN GAAS INJECTION LASERS
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 1973 - &
[2] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &
[3] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX
ABRAHAMS, MS
WEISBERG, LR
BUIOCCHI, CJ
BLANC, J
[J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &
[4] BAN VS, 1973, J PHYS CHEM SOLIDS, V34, P2277
[5] MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1)
BAN, VS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) : 1473 - &
[6] BLUM SE, 1973, SPR EL SOC CHIC M, P119
[7] THE ELECTRICAL PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
BROUDY, RM
[J]. ADVANCES IN PHYSICS, 1963, 12 (46) : 135 - 184
[8] BURMEISTER RA, 1969, T METALL SOC AIME, V245, P587
[9] INVESTIGATION OF INHOMOGENEITIES IN GAAS BY ELECTRON-BEAM EXCITATION
CASEY, HC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 153 - +
[10] CASS TR, UNPUBLISHED RESULTS

← 1 2 3 4 →