Effects of very thin strain layers on dielectric properties of epitaxial Ba0.6Sr0.4TiO3 films

被引：173

作者：

Park, BH

Peterson, EJ

Jia, QX

Lee, J

Zeng, X

Si, W

Xi, XX

机构：

[1] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

[2] Sungkyunkwan Univ, Dept Mat Engn, Suwon 440746, South Korea

[3] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 04期

关键词：

D O I：

10.1063/1.1340863

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have epitaxially grown Ba0.6Sr0.4TiO3 (BST-0.4) thin films on MgO(001) substrates. By inserting a very thin Ba1-xSrxTiO3 (x=0.1-0.7) interlayer between the MgO substrate and the main layer of BST-0.4, we are able to manipulate the degree of the stress in BST-0.4 films. We have controlled the stress states, i.e., the lattice distortion ratio (D=in-plane lattice constant/out-of-plane lattice constant) of the BST-0.4 films by varying the chemical composition of the interlayers. We have found that small variations of D value can result in significantly large changes of dielectric properties. A BST-0.4 film under small tensile stress, which has a D value of 1.0023, shows the largest dielectric permittivity and tunability. (C) 2001 American Institute of Physics.

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页码：533 / 535

页数：3

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共 14 条

[1] The effect of annealing on the microwave properties of Ba0.5Sr0.5TiO3 thin films [J].

Chang, WT ;

Horwitz, JS ;

Carter, AC ;

Pond, JM ;

Kirchoefer, SW ;

Gilmore, CM ;

Chrisey, DB .

APPLIED PHYSICS LETTERS, 1999, 74 (07) :1033-1035

[2] Characteristics of the surface layer of barium strontium titanate thin films deposited by laser ablation [J].

Craciun, V ;

Singh, RK .

APPLIED PHYSICS LETTERS, 2000, 76 (14) :1932-1934

[3] BASIC CHARACTERISTICS OF 2 LAYERED SUBSTRATE COPLANAR WAVE-GUIDES [J].

GEVORGIAN, SS .

ELECTRONICS LETTERS, 1994, 30 (15) :1236-1237

[4] Microstructure and dielectric properties of Ba1-xSrxTiO3 films grown on LaAlO3 substrates [J].

Gim, Y ;

Hudson, T ;

Fan, Y ;

Kwon, C ;

Findikoglu, AT ;

Gibbons, BJ ;

Park, BH ;

Jia, QX .

APPLIED PHYSICS LETTERS, 2000, 77 (08) :1200-1202

[5] Integration of nonlinear dielectric barium strontium titanate with polycrystalline yttrium iron garnet [J].

Jia, QX ;

Groves, JR ;

Arendt, P ;

Fan, Y ;

Findikoglu, AT ;

Foltyn, SR ;

Jiang, H ;

Miranda, FA .

APPLIED PHYSICS LETTERS, 1999, 74 (11) :1564-1566

[6] Microwave properties of tetragonally distorted (Ba0.5Sr0.5)TiO3 thin films [J].

Kim, WJ ;

Chang, W ;

Qadri, SB ;

Pond, JM ;

Kirchoefer, SW ;

Chrisey, DB ;

Horwitz, JS .

APPLIED PHYSICS LETTERS, 2000, 76 (09) :1185-1187

[7] The effect of annealing on the structure and dielectric properties of BaxSr1-xTiO3 ferroelectric thin films [J].

Knauss, LA ;

Pond, JM ;

Horwitz, JS ;

Chrisey, DB ;

Mueller, CH ;

Treece, R .

APPLIED PHYSICS LETTERS, 1996, 69 (01) :25-27

[8] High nonlinearity of Ba0.6Sr0.4TiO3 films heteroepitaxially grown on MgO substrates [J].

Park, BH ;

Gim, Y ;

Fan, Y ;

Jia, QX ;

Lu, P .

APPLIED PHYSICS LETTERS, 2000, 77 (16) :2587-2589

[9] Effect of mechanical boundary conditions on phase diagrams of epitaxial ferroelectric thin films [J].

Pertsev, NA ;

Zembilgotov, AG ;

Tagantsev, AK .

PHYSICAL REVIEW LETTERS, 1998, 80 (09) :1988-1991

[10] Three-dimensional strain states and crystallographic domain structures of epitaxial colossal magnetoresistive La0.8Ca0.2MnO3 thin films [J].

Rao, RA ;

Lavric, D ;

Nath, TK ;

Eom, CB ;

Wu, L ;

Tsui, F .

APPLIED PHYSICS LETTERS, 1998, 73 (22) :3294-3296