SnO2 thin film;
NO2;
gas sensors;
low operating temperature;
D O I:
10.1016/j.snb.2007.03.033
中图分类号:
O65 [分析化学];
学科分类号:
070302 ;
081704 ;
摘要:
Undoped and indium-doped SnO2, thin films with different doping concentrations have been prepared by sol-gel spin coating process on float glass substrates. XRD, TEM and AFM studies are carried out to investigate the effect of indium in SnO2, thin films. TEM studies reveal the dispersed nanoparticles of around 3 nm size (similar to Debye length). In addition we have observed that indium doping improves the sensor response and selectivity towards NO2 gas at a low operating temperature and also resolves the problem of agglomeration of particles that is responsible for the lowering of sensor response and stability in the above mentioned particle size range. A very high sensor response of around 7200% has been observed in 10 wt% indium-doped SnO2, films to 500 ppm of NO, gas at an operating temperature of 150 degrees C. (C) 2007 Elsevier B.V. All rights reserved.
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Ji, Z
Zhao, L
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机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhao, L
He, ZP
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机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
He, ZP
Zhou, Q
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机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhou, Q
Chen, C
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机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Ji, Z
Zhao, L
论文数: 0引用数: 0
h-index: 0
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhao, L
He, ZP
论文数: 0引用数: 0
h-index: 0
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
He, ZP
Zhou, Q
论文数: 0引用数: 0
h-index: 0
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhou, Q
Chen, C
论文数: 0引用数: 0
h-index: 0
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China