Surface reconstruction suggests a nucleation mechanism in bulk: Sb/Si(113) and {113} planar defects

被引：21

作者：

Dabrowski, J ^{[1
]}

Mussig, HJ ^{[1
]}

Wolff, G ^{[1
]}

Hinrich, S ^{[1
]}

机构：

[1] Inst Semicond Phys, D-15230 Frankfurt, Germany

来源：

SURFACE SCIENCE | 1998年 / 411卷 / 1-2期

关键词：

ab initio quantum mechanical methods and calculations; antimony; chemisorption; density functional calculations; low index single crystal surface; scanning tunneling microscopy; silicon; surface relaxation and reconstruction;

D O I：

10.1016/S0039-6028(98)00327-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report results of scanning tunneling microscopy measurements and ab initio total energy calculations showing that certain submonolayer coverages of Sb on Si(113), which is a stable surface resembling a mixture of Si(001) and Si(111), force some atoms into interstitial sites. The geometry is novel for surface reconstruction but closely related to the structure of bulk rodlike defects. This qualitatively new behavior of group V atoms on silicon shows that studies of passivated surfaces can provide data useful for verification of bulk defect models. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：54 / 60

页数：7

共 29 条

[1] SURFACE DOPING AND STABILIZATION OF SI(111) WITH BORON [J].