Polarized front-illumination response in intraband quantum dot infrared photodetectors at 77 K

被引:60
作者
Finkman, E [1 ]
Maimon, S
Immer, V
Bahir, G
Schacham, SE
Fossard, F
Julien, FH
Brault, J
Gendry, M
机构
[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
[2] Technion Israel Inst Technol, Inst Solid State, Haifa, Israel
[3] Coll Judea & Samaria, Dept Elect & Elect Engn, IL-44837 Ariel, Israel
[4] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France
[5] Ecole Cent Lyon, Lab Elect LEOM, CNRS, UMR 5512, F-69131 Ecully, France
关键词
D O I
10.1103/PhysRevB.63.045323
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Multicolor quantum dot infrared photodetectors with normal incidence background limited performance (BLIP) at 77 K were implemented. The devices are composed of self-assembled InAs dots grown on InAlAs barrier layers, lattice matched to InP substrate. These dots are formed in a shape of flattened parallelepipeds. The photoconductive spectra were observed at all polarizations. Normal incidence photocurrent spectra reveal several polarized peaks in the range of 100-400 meV due to intersubband transitions. The detector responsivity at normal incidence is similar to that obtained for polarization normal to the layers, and is comparable to that achieved in quantum well infrared photodetectors (QWIP's). The transition energies, the polarization selection rules, and relative intensities of the peaks were tentatively interpreted in terms of a three-dimensional separation of variables.
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页数:7
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