Quantum dot infrared photodetector using modulation doped InAs self-assembled quantum dots

被引：57

作者：

Horiguchi, N

Futatsugi, T

Nakata, Y

Yokoyama, N

Mankad, T

Petroff, PM

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93116 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 4B期

关键词：

InAs dot; quantum dot infrared photodetector; intersubband transition; modulation doping; polarization dependence;

D O I：

10.1143/JJAP.38.2559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the quantum dot infrared photodetector using the modulation doped InAs self-assembled quantum dots. By modulation doping, it is possible to remove the effect of the dopants on the energy level in InAs dots and to attribute clearly the infrared photocurrent to the carrier excitation in InAs dots. The infrared photocurrent in the detector was clearly observed up to 30 K. The peak energy and the polarization dependence of the infrared photocurrent are comparable to the infrared electron excitation from the ground state in InAs dots to the conduction band edge of GaAs barriers.

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收藏

页码：2559 / 2561

页数：3

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