Heterostructure P-channel metal-oxide-semiconductor transistor utilizing a Si1-x-yGexCy channel

被引：18

作者：

John, S ^{[1
]}

Ray, SK ^{[1
]}

Quinones, E ^{[1
]}

Oswal, SK ^{[1
]}

Banerjee, SK ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 06期

关键词：

D O I：

10.1063/1.123386

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dc characteristics of Si1-x-yGexCy P-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) were evaluated between room temperature and 77 K and were compared to those of Si and Si1-xGex PMOSFETs. The low-field effective mobility in Si1-x-yGexCy devices is found to be higher than that of Si1-xGex (grown in the metastable regime) and Si devices at low gate bias and room temperature. However, with increasing transverse fields and with decreasing temperatures, Si1-x-yGexCy devices show degraded performance. The enhancement at low gate bias is attributed to the strain stabilization effect of C. This application of Si1-x-yGexCy in PMOSFETs demonstrates potential benefits in the use of C for strain stabilization of the binary alloy. (C) 1999 American Institute of Physics. [S0003-6951(99)03906-6].

引用

页码：847 / 849

页数：3

共 11 条

[1]

BECK RB, 1992, P SOC PHOTO-OPT INS, V1783, P356, DOI 10.1117/12.131037

[2] GROWTH AND STRAIN COMPENSATION EFFECTS IN THE TERNARY SI1-X-YGEXCY ALLOY SYSTEM [J].