Cost-effective cleaning for advanced Si-processing

被引：6

作者：

Heyns, MM ^{[1
]}

Bearda, T ^{[1
]}

Cornelissen, I ^{[1
]}

De Gendt, S ^{[1
]}

Knotter, DM ^{[1
]}

Loewenstein, LM ^{[1
]}

Lux, M ^{[1
]}

Mertens, PW ^{[1
]}

Mertens, S ^{[1
]}

Meuris, M ^{[1
]}

Schaekers, M ^{[1
]}

Snee, P ^{[1
]}

Teerlinck, I ^{[1
]}

Vos, R ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746365

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of various metal contaminants on the thin gate oxide integrity is investigated and a classification is made according to their final position in the structure. A simplified cleaning strategy is presented which is highly performant and at the same time cost-effective and has less environmental impact than the traditional cleaning sequences. Finally, a novel environmentally friendly ozone/DI-water process for the removal of photoresist and organic post-etch residues is proposed.

引用

页码：325 / 328

页数：4

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