Growth and electronic transport in 9,10-diphenylanthracene single crystals - An organic semiconductor of high electron and hole mobility

被引：65

作者：

Tripathi, Ashutosh Kumar

Heinrich, Michael

Siegrist, Theo

Pflaum, Jens

机构：

[1] Univ Stuttgart, Inst Phys 3, D-70550 Stuttgart, Germany

[2] Bell Labs, Murray Hill, NJ 07974 USA

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 16期

关键词：

D O I：

10.1002/adma.200602162

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Electron and hole transport is demonstrated on bulk crystals of the organic serniconductor 9,10-diphenylanthracene (DPA). The high mobilities at room E 2 temperature for electrons (ca. 13 cm(2) Vs(-1)) and holes (ca. 3.7 cm(2) VS-1) make DPA a prominent candidate for device E 6 applications. The hole mobility follows a bandlike transport at high temperatures (200K-400K) and a saturation behavior in the low-temperature regime (see figure), the latter being discussed in the context of various transport models.

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页码：2097 / +

页数：6

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