Electronic properties in p-type GaN studied by Raman scattering

被引：41

作者：

Harima, H ^{[1
]}

Inoue, T

Nakashima, S

Furukawa, K

Taneya, M

机构：

[1] Osaka Univ, Dept Appl Phys, Osaka 5650871, Japan

[2] Sharp Corp, Cent Res Labs, Nara 6328567, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 14期

关键词：

D O I：

10.1063/1.122348

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman spectra from p-type GaN have been systematically studied in the hole density range of 5 X 10(16) -1 X 10(18) cm(-3). Contrary to the case of n-type samples, spectral profiles of the LO-phonon-plasmon coupled mode in p-type show no remarkable change with the hole density. Thus, precise evaluation of electrical transport parameters such as carrier density and mobility from the coupled mode profile is difficult. However, a continuum band has been observed in the low-frequency range of the spectra, becoming intense with the increase of the hole density. This band has been attributed to the inter-valence-band transition of holes, and the intensity can be used as a good measure of the hole density. (C) 1998 American Institute of Physics. [S0003-6951(98)02540-6].

引用

页码：2000 / 2002

页数：3

共 13 条

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