Nonlinear operation of GaInAs/InP-based three-terminal ballistic junctions

被引：125

作者：

Shorubalko, I ^{[1
]}

Xu, HQ ^{[1
]}

Maximov, I ^{[1
]}

Omling, P ^{[1
]}

Samuelson, L ^{[1
]}

Seifert, W ^{[1
]}

机构：

[1] Lund Univ, Solid State Phys & Nanometer Consortium, S-22100 Lund, Sweden

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 09期

关键词：

D O I：

10.1063/1.1396626

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on nonlinear electrical properties of three-terminal ballistic junctions (TBJs) based on high-electron-mobility GaInAs/InP quantum-well structures. Nonlinear electrical transport behavior of the TBJs is found, and we show a correlation between this behavior and the linear regime of electron transmission in the devices. We also study device geometry effects on these electrical properties of the TBJs. Finally, we demonstrate room-temperature operation of the devices. The results obtained are compared with recent predictions by Xu [H. Q. Xu, Appl. Phys. Lett. 78, 2064 (2001)] and good agreement is found. (C) 2001 American Institute of Physics.

引用

页码：1384 / 1386

页数：3

共 15 条

[1] Gauge-invariant nonlinear electric transport in mesoscopic conductors [J].