Paramagnetism and antiferromagnetic d-d coupling in GaMnN magnetic semiconductor

被引：135

作者：

Zajac, M ^{[1
]}

Gosk, J

Kaminska, M

Twardowski, A

Szyszko, T

Podsiadlo, S

机构：

[1] Univ Warsaw, Inst Expt Phys, Hoza 69, PL-00681 Warsaw, Poland

[2] Warsaw Univ Technol, Fac Phys, PL-00662 Warsaw, Poland

[3] Warsaw Univ Technol, Fac Chem, PL-00664 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 15期

关键词：

D O I：

10.1063/1.1406558

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The magnetization of Ga1-xMnxN (x <0.1) crystals was measured as a function of the magnetic field and temperature. Paramagnetic behavior typical of spin S=5/2 expected for Mn2+ (d(5)) magnetic centers was observed in the temperature range of 2 K <T < 300 K. On the other hand, antiferromagnetic coupling between Mn ions was clearly visible. The nearest neighbor (NN) coupling constant J(NN)/k(B)=-1.9 K was estimated from the temperature dependence of the magnetization. (C) 2001 American Institute of Physics.

引用

页码：2432 / 2434

页数：3

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