Low-temperature atmospheric-pressure metal-organic chemical vapor deposition of molybdenum nitride thin films

被引：34

作者：

Fix, R ^{[1
]}

Gordon, RG ^{[1
]}

Hoffman, DM ^{[1
]}

机构：

[1] UNIV HOUSTON,DEPT CHEM,HOUSTON,TX 77204

来源：

THIN SOLID FILMS | 1996年 / 288卷 / 1-2期

关键词：

chemical vapour deposition; molybdenum; nitrides; organometallic vapour deposition;

D O I：

10.1016/S0040-6090(96)08867-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous molybdenum nitride thin films were deposited from tetrakis(dimethylamido) molybdenum(IV), Mo(N(CH3)(2))(4), and ammonia at low substrate temperatures (200-400 degrees C). The films were characterized by Rutherford backscattering spectroscopy, elastic recoil detection and X-ray photoelectron spectroscopy. Rutherford backscattering gave a N/Mo = 1.4-1.5 stoichiometry that did not vary significantly with deposition temperature. The hydrogen content, determined by elastic recoil detection, varied from H/Mo = 1.0 to 0.45 with the content decreasing as the deposition temperature was increased. Carbon contamination was not observed in the film bulk. The films had high resistivities (approximate to 10(4) mu Omega cm).

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页码：116 / 119

页数：4

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