Time-domain simulation of large lossy interconnect systems on conducting substrates

被引:6
作者
Braunisch, H [1 ]
Grabinski, H
机构
[1] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[2] MIT, Elect Res Lab, Cambridge, MA 02139 USA
[3] Leibniz Univ Hannover, Informat Technol Lab, D-30167 Hannover, Germany
关键词
D O I
10.1109/81.721257
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The most general class of uniform transmission-line systems is considered, assuming that samples of the frequency. dependent parameter matrices R, L. G, and C are given. In particular, substrate effects which influence wave propagation along integrated circuits (IC) interconnects typically over a very broad range of frequencies are included. A time-domain simulation technique which can handle this problem is described in detail, The algorithm can be embedded in general-purpose circuit simulators and is based on modal analysis, mode tracking, modal delay separation, broadband rational function least-squares approximation directly in partial fraction form, and recursive convolution. A numerical example for realistic geometry and material parameters of the examined transmission-line structure shows the significance of substrate effects in the frequency and-more important-in the time domain.
引用
收藏
页码:909 / 918
页数:10
相关论文
共 16 条
[1]   TRANSIENT ANALYSIS OF LOSSY MULTICONDUCTOR TRANSMISSION-LINES IN NONLINEAR CIRCUITS [J].
BLAZECK, TS ;
MITTRA, R .
IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1991, 14 (03) :618-627
[2]   TIME-DOMAIN RESPONSE OF MULTICONDUCTOR TRANSMISSION-LINES [J].
DJORDJEVIC, AR ;
SARKAR, TK ;
HARRINGTON, RF .
PROCEEDINGS OF THE IEEE, 1987, 75 (06) :743-764
[3]   TIME-DOMAIN SIMULATION OF MULTICONDUCTOR TRANSMISSION-LINES WITH FREQUENCY-DEPENDENT LOSSES [J].
GORDON, C ;
BLAZECK, T ;
MITTRA, R .
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1992, 11 (11) :1372-1387
[4]   FULL-WAVE ANALYSIS AND ANALYTICAL FORMULAS FOR THE LINE PARAMETERS OF TRANSMISSION-LINES ON SEMICONDUCTOR SUBSTRATES [J].
GROTELUSCHEN, E ;
DUTTA, LS ;
ZAAGE, S .
INTEGRATION-THE VLSI JOURNAL, 1993, 16 (01) :33-58
[5]   QUASI-ANALYTICAL ANALYSIS OF THE BROAD-BAND PROPERTIES OF MULTICONDUCTOR TRANSMISSION-LINES ON SEMICONDUCTING SUBSTRATES [J].
GROTELUSCHEN, E ;
DUTTA, LS ;
ZAAGE, S .
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART B-ADVANCED PACKAGING, 1994, 17 (03) :376-382
[6]   COUPLED LOSSY TRANSMISSION-LINE CHARACTERIZATION AND SIMULATION [J].
GRUODIS, AJ ;
CHANG, CS .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (01) :25-41
[7]   PROPERTIES OF MICROSTRIP LINE ON SI-SIO2 SYSTEM [J].
HASEGAWA, H ;
FURUKAWA, M ;
YANAI, H .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1971, MT19 (11) :869-+
[8]   Optimal transient simulation of transmission lines [J].
Kuznetsov, DB ;
SchuttAine, JE .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS, 1996, 43 (02) :110-121
[9]   TRANSIENT SIMULATION OF LOSSY INTERCONNECTS BASED ON THE RECURSIVE CONVOLUTION FORMULATION [J].
LIN, S ;
KUH, ES .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS, 1992, 39 (11) :879-892
[10]   RECURSIVE CONVOLUTION AND DISCRETE-TIME DOMAIN SIMULATION OF LOSSY COUPLED TRANSMISSION-LINES [J].
NGUYEN, TV .
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1994, 13 (10) :1301-1305