Influence of energetic bombardment on stress, resistivity, and microstructure of indium tin oxide films grown by radio frequency magnetron sputtering on flexible polyester substrates

被引:67
作者
Carcia, PF [1 ]
McLean, RS
Reilly, MH
Li, ZG
Pillione, LJ
Messier, RF
机构
[1] DuPont Co Inc, Res & Dev, Expt Stn, Wilmington, DE 19880 USA
[2] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2003年 / 21卷 / 03期
关键词
D O I
10.1116/1.1566789
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Using rf magnetron sputtering, we have identified conditions for growing indium tin oxide (ITO) thin films at room temperature that simultaneously exhibit low resistivity (similar to3 x 10(-4) Omega cm), high optical transparency (>80%), and near-zero stress on polyester substrates. From transport measurements, we deduced that Sn donor atoms had little effect on electrical conduction in ITO films. We further concluded from an analysis of sputtered ions and atoms that bombardment by energetic (>35 eV) negative oxygen ions caused high stress (similar to1 GPa) in films grown at lower (6 mTorr) pressure. We further concluded that bombardment by lower-energy (1-2 eV) sputtered oxygen species At the growing film surface was likely responsible for the dependence of ITO crystallization and microstructure on oxygen partial pressure during deposition. (C) 2003 American Vacuum Society.
引用
收藏
页码:745 / 751
页数:7
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