Observation of "capacitance overshoot" in the transient current measurement of polysilicon TFT's

被引：18

作者：

Tam, SWB ^{[1
]}

Migliorato, P ^{[1
]}

Lui, OKB ^{[1
]}

Quinn, MJ ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 01期

关键词：

capacitance measurement; current measurement; polysilicon TFT (poly-crystalline silicon thin film transistor); transient analysis;

D O I：

10.1109/16.737451

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have observed and analyzed a new effect in the transient current measurement of polysilicon TFT's: the presence of an "overshoot" in the transient response, which implies a time dependent gate capacitance exceeding CoxWL. We have also performed two-dimensional (2-D) transient simulations to explain the experimental results. Our analysis indicates that a TFT circuit model based on lumped intranodal impedances cannot explain the observed transient current behavior. It follows that the "subtransistor" approach is essential for accurate dynamic circuit simulations.

引用

页码：134 / 138

页数：5

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