共 13 条
[1]
Phase shifting and optical proximity corrections to improve CD control on logic devices in manufacturing for sub 0.35 mu m I-Line
[J].
OPTICAL MICROLITHOGRAPHY X,
1997, 3051
:146-153
[2]
Attwood D., 1999, SOFT XRAYS EXTREME U
[3]
EUCLIDES, the European EUVL program
[J].
EMERGING LITHOGRAPHIC TECHNOLOGIES III, PTS 1 AND 2,
1999, 3676
:246-252
[4]
HARRIOTT LR, 1997, FUTURE LAB INT, V2, P143
[6]
LYMAN J, 1985, ELECTRONICS, V58, P36
[7]
Pattern transfer at k(1)=0.5: Get 0.25 mu m lithography ready for manufacturing
[J].
OPTICAL MICROLITHOGRAPHY IX,
1996, 2726
:113-124
[8]
Projection reduction exposure with variable axis immersion lenses: Next generation lithography
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1999, 17 (06)
:2840-2846
[9]
SEIDEL P, 1999, SEM NEXT GEN LITH WO
[10]
Semiconductor Industry Association, 1999, INT TECHN ROADM SEM