Silicon micro XY-stage with a large area shuttle and no-etching holes for SPM-based data storage

被引:62
作者
Kim, CH [1 ]
Jeong, HM
Jeon, JU
Kim, YK
机构
[1] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea
[2] Univ Ulsan, Sch Mech & Automot Engn, Ulsan 680749, South Korea
关键词
high-density storage; large area shuttle; micro XY-stage; scanning probe microscopy (SPM); micro-channel assisted release process (mu CARP);
D O I
10.1109/JMEMS.2003.809960
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A micro XY-stage with a 5 x 5 mm(2)-area shuttle is fabricated for application in a nanometer-scale data storage device. A central shuttle of the device is designed as a large square on which a high-density recording medium is deposited. Perpendicularly combined comb-drive actuators allow the large shuttle free access in the x-y plane. No etching holes on the central shuttle are preferred in order to maximize the effective recording area. Therefore, a novel release process, Micro-Channel Assisted Release Process (muCARP) is proposed to release a large plate structure without any etching holes and to resist downward sticking. The static and dynamic strokes of the device were measured. Mechanical interferences between x-and y-directional drives were estimated by finite-element method (FEM) analysis and compared with the experimental results.
引用
收藏
页码:470 / 478
页数:9
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