A sticking model of suspended polysilicon microstructure including residual stress gradient and postrelease temperature

被引:41
作者
Yee, Y [1 ]
Park, M
Chun, K
机构
[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea
[3] LG Corp Inst Technol, Seoul 137742, South Korea
[4] LG Semicon Co Ltd, Cheongju 360480, South Korea
关键词
grain hole; polysilicon; sticking; stress gradient; surface micromachining;
D O I
10.1109/84.709653
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A sticking (stiction) model for a cantilevered! beam is derived. This model includes the effect of the bending moment, which stems from stress gradient along the vertical direction of structural polysilicon, and the temperature during the release process, The bending moment due to the stress gradient will play an important role to evaluate antisticking efficiency since liquid tension and surface energy of microstructures tend to become smaller by newly developed antisticking techniques. The effects of stress gradient and temperature were analyzed and verified with surface-micromachined polysilicon cantilevers. By modifying the substrate polysilicon with grain-hole formation technique, the effects of residual stress gradient in polysilicon on stiction could be observed in the condition of low work of adhesion.
引用
收藏
页码:339 / 344
页数:6
相关论文
共 17 条
[1]   EFFECTS OF ELEVATED-TEMPERATURE TREATMENTS IN MICROSTRUCTURE RELEASE PROCEDURES [J].
ABE, T ;
MESSNER, WC ;
REED, ML .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 1995, 4 (02) :66-75
[2]  
ADAMSON AW, 1982, PHYSICAL CHEM SURFAC
[3]  
ALLEY RL, P INT C SOL STAT SEN, P288
[4]   The development of a low-stress polysilicon process compatible with standard device processing [J].
French, PJ ;
vanDrieenhuizen, BP ;
Poenar, D ;
Goosen, JFL ;
Mallee, R ;
Sarro, PM ;
Wolffenbuttel, RF .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 1996, 5 (03) :187-196
[5]   FINE-GRAINED POLYSILICON FILMS WITH BUILT-IN TENSILE STRAIN [J].
GUCKEL, H ;
BURNS, DW ;
VISSER, CCG ;
TILMANS, HAC ;
DEROO, D .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (06) :800-801
[6]  
HOUSTON MR, P INT C SOL STAT SEN, V1, P210
[7]  
KAMINS T, 1987, POLYCRYSTALLINE SILI
[8]  
LEE S, 1997, ISRC MEMS MPC REP
[9]   Dry release for surface micromachining with HF vapor-phase etching [J].
Lee, YI ;
Park, KH ;
Lee, J ;
Lee, CS ;
Yoo, HJ ;
Kim, CJ ;
Yoon, YS .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 1997, 6 (03) :226-233
[10]  
LEGTENBERG R, P INT C SOL STAT SEN, P198