Direct observation of conducting filaments on resistive switching of NiO thin films

被引：233

作者：

Son, J. Y. ^{[1
]}

Shin, Y. -H. ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 22期

关键词：

D O I：

10.1063/1.2931087

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Hg/NiO/Pt capacitor with a Hg top electrode diameter of about 35 mu m showed the typical bistable resistive switching characteristic. After the removal of the Hg top electrode, we directly observed the formation and removal of filaments for a high resistive state (R(off)) and a low resistive state (R(on)) by conducting atomic force microscope (CAFM). CAFM images for R(off) and R(on) states directly exhibit evidence of the formation and removal of filaments on the surface, which supports well the filament model as a switching mechanism of resistive random access memory. (C) 2008 American Institute of Physics.

引用

页数：3

共 10 条

[1] Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3 [J].

Fujii, T ;

Kawasaki, M ;

Sawa, A ;

Akoh, H ;

Kawazoe, Y ;

Tokura, Y .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :012107-1

[2] SWITCHING PROPERTIES OF THIN NIO FILMS [J].

GIBBONS, JF ;

BEADLE, WE .

SOLID-STATE ELECTRONICS, 1964, 7 (11) :785-&

[3] Improvement of resistive memory switching in NiO using IrO2 [J].

Kim, D. C. ;

Lee, M. J. ;

Ahn, S. E. ;

Seo, S. ;

Park, J. C. ;

Yoo, I. K. ;

Baek, I. G. ;

Kim, H. J. ;

Yim, E. K. ;

Lee, J. E. ;

Park, S. O. ;

Kim, H. S. ;

Chung, U-In ;

Moon, J. T. ;

Ryu, B. I. .

APPLIED PHYSICS LETTERS, 2006, 88 (23)

[4]

LEE SSM, 2007, ADV MAT WEINHEIM, V19, P73

[5]

LEE YPM, 2007, ADV MAT WEINHEIM, V19, P3919

[6] Dual chemical role of Ag as an additive in chalcogenide glasses [J].

Mitkova, M ;

Wang, Y ;

Boolchand, P .

PHYSICAL REVIEW LETTERS, 1999, 83 (19) :3848-3851

[7] REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES [J].

OVSHINSKY, SR .

PHYSICAL REVIEW LETTERS, 1968, 21 (20) :1450-+

[8] Nonvolatile memory with multilevel switching: A basic model [J].

Rozenberg, MJ ;

Inoue, IH ;

Sánchez, MJ .

PHYSICAL REVIEW LETTERS, 2004, 92 (17) :178302-1

[9] Reproducible resistance switching in polycrystalline NiO films [J].

Seo, S ;

Lee, MJ ;

Seo, DH ;

Jeoung, EJ ;

Suh, DS ;

Joung, YS ;

Yoo, IK ;

Hwang, IR ;

Kim, SH ;

Byun, IS ;

Kim, JS ;

Choi, JS ;

Park, BH .

APPLIED PHYSICS LETTERS, 2004, 85 (23) :5655-5657

[10] Nanoionics-based resistive switching memories [J].

Waser, RaineR ;

Aono, Masakazu .

NATURE MATERIALS, 2007, 6 (11) :833-840

← 1 →