Optical second harmonic spectroscopy of semiconductor surfaces: advances in microscopic understanding

被引:69
作者
Downer, MC [1 ]
Mendoza, BS
Gavrilenko, VI
机构
[1] Univ Texas, Dept Phys, Austin, TX 78712 USA
[2] Ctr Invest Opt, AC Leon, Guanajuato, Mexico
[3] Rudolph Technol Inc, Flanders, NJ 07836 USA
关键词
second harmonic spectroscopy; silicon surfaces;
D O I
10.1002/sia.1133
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Even-order non-linear optical spectroscopy has emerged as an unusually sensitive technique for noninvasive analysis of surfaces and buried interfaces of centrosymmetric materials. The forefront challenges are: to develop reliable microscopic computational methods for calculating and interpreting measured surface non-linear spectra; to relate non-linear surface spectra quantitatively to linear optical surf ace probes such as reflectance-difference spectroscopy (RDS); and to develop convenient methods for acquiring nonlinear optical spectra over bandwidths (several electron-volts) that encompass multiple electronic surface resonances. We review recent advances in both calculation and measurement of non-linear spectra, with emphasis on reconstructed and adsorbate-covered silicon surfaces in epitaxial growth environments. Copyright (C) 2001 John Wiley & Sons, Ltd.
引用
收藏
页码:966 / 986
页数:21
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