Optical second-harmonic phase spectroscopy of the Si(111)-SiO2 interface

被引：8

作者：

Aktsipetrov, OA

Dolgova, TV

Fedyanin, AA

Schuhmacher, D

Marowsky, G

机构：

[1] Laser Lab Goettingen, D-37077 Gottingen, Germany

[2] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119899, Russia

来源：

THIN SOLID FILMS | 2000年 / 364卷 / 1-2期

基金：

俄罗斯基础研究基金会;

关键词：

second-harmonic generation; spectroscopy; phase measurements; silicon(111);

D O I：

10.1016/S0040-6090(99)00909-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The two-photon interband electron transitions in a silicon layer directly underneath the Si(111)-SiO2 interface in the vicinity of the E-2 critical point (CP) are probed by optical second-harmonic (SH) spectroscopy. The combination of the SH phase and intensity spectroscopy allows the complete deconvolution of the spectral behavior of the amplitude and phase of the quadratic susceptibility chi((2)) near the E-2 critical point of silicon. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

收藏

页码：91 / 94

页数：4

相关论文

共 15 条

[1] dc-electric-field-induced and low-frequency electromodulation second-harmonic generation spectroscopy of Si(001)-SiO2 interfaces [J].

Aktsipetrov, OA ;

Fedyanin, AA ;

Melnikov, AV ;

Mishina, ED ;

Rubtsov, AN ;

Anderson, MH ;

Wilson, PT ;

ter Beek, H ;

Hu, XF ;

Dadap, JI ;

Downer, MC .

PHYSICAL REVIEW B, 1999, 60 (12) :8924-8938

[2] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1983, 27 (02) :985-1009

[3] Second-harmonic spectroscopy of a Si(001) surface during calibrated variations in temperature and hydrogen coverage [J].

Dadap, JI ;

Xu, Z ;

Hu, XF ;

Downer, MC ;

Russell, NM ;

Ekerdt, JG ;

Aktsipetrov, OA .

PHYSICAL REVIEW B, 1997, 56 (20) :13367-13379

[4] IDENTIFICATION OF STRAINED SILICON LAYERS AT SI-SIO2 INTERFACES AND CLEAN SI SURFACES BY NONLINEAR-OPTICAL SPECTROSCOPY [J].

DAUM, W ;

KRAUSE, HJ ;

REICHEL, U ;

IBACH, H .

PHYSICAL REVIEW LETTERS, 1993, 71 (08) :1234-1237

[5] NONLINEAR-OPTICAL SPECTROSCOPY AT SILICON INTERFACES [J].

DAUM, W ;

KRAUSE, HJ ;

REICHEL, U ;

IBACH, H .

PHYSICA SCRIPTA, 1993, T49B :513-518

[6]

Edlen B, 1966, Metrologia, V2, P71, DOI DOI 10.1088/0026-1394/2/2/002

[7] Second-harmonic spectroscopy of interband excitations at the interfaces of strained Si(100)-Si0.85Ge0.15-SiO2 heterostructures [J].

Erley, G ;

Butz, R ;

Daum, W .

PHYSICAL REVIEW B, 1999, 59 (04) :2915-2926

[8]

ERLEY G, 1998, PHYS REV B, V58, P1734

[9] GENERAL-CONSIDERATIONS ON OPTICAL 2ND-HARMONIC GENERATION FROM SURFACES AND INTERFACES [J].

GUYOTSIONNEST, P ;

CHEN, W ;

SHEN, YR .

PHYSICAL REVIEW B, 1986, 33 (12) :8254-8263

[10]

HEINZ TF, 1991, NONLINEAR SURFACE EL, P355