High resistivity annealed low-temperature GaAs with 100 fs lifetimes

被引：121

作者：

Gregory, IS

Baker, C

Tribe, WR

Evans, MJ

Beere, HE

Linfield, EH

Davies, AG

Missous, M

机构：

[1] Univ Cambridge, Cavendish Lab, Semicond Phys Grp, Cambridge CB3 0HE, England

[2] TeraView Ltd, Cambridge CB4 0WG, England

[3] Univ Manchester, Inst Sci & Technol, Dept Elect Engn & Elect, Manchester M60 1QD, Lancs, England

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 20期

关键词：

D O I：

10.1063/1.1628389

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the critical effect of postgrowth annealing temperature on the properties of low-temperature-grown GaAs. By using annealing temperatures substantially below the 500-600degreesC commonly reported, GaAs with high resistivity and with carrier lifetimes as short as 100 fs can be routinely obtained. We discuss the optimum, but different, anneal conditions required for terahertz photoconductive emitters and detectors, and illustrate their use in a continuous-wave system. (C) 2003 American Institute of Physics.

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页码：4199 / 4201

页数：3

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