Employing step and flash imprint lithography for gate level patterning of a MOSFET device

Step and Flash Imprint Lithography (SFIL) is an alternative lithography technique that enables patterning of sub-100 nm features at a cost that has the potential to be substantially lower than either conventional projection lithography or proposed next generation lithography techniques. SFIL is a molding process that transfers the topography of a rigid transparent template using a low-viscosity, UV-curable organosilicon solution at room temperature and with minimal applied pressure.(1) Employing SFIL technology we have successfully patterned areas of high and low density, semi-dense and isolated lines down to 20 run,(2) and demonstrated the capability of layer-to-layer alignment.(3) We have also confirmed the use of SFIL to produce functional optical devices including a micropolarizer array consisting of orthogonal 100 nm titanium lines and spaces fabricated using a metal lift-off process.(4) This paper presents a demonstration of the SFIL technique for the patterning of the gate level in a functional MOSFET device.