Electric fatigue in sol-gel prepared Pb, Zr, Sn, Ti NbO3 thin films

被引：41

作者：

Jang, JH ^{[1
]}

Yoon, KH

Shin, HJ

机构：

[1] Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea

[2] Samsung Adv Inst Technol, Microsyst Lab, Suwon 440600, South Korea

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 13期

关键词：

D O I：

10.1063/1.122294

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fatigue properties of the sol-gel derived Pb-0.99[(Zr0.6Sn0.4)(1-X)Ti-X](0.98)Nb0.02O3 (40/100X/2) thin films deposited on platinized silicon substrates were investigated as a function of Ti content (0.03 less than or equal to X less than or equal to 0.15). With an increase of Ti content X, the antiferroelectric phase was transformed to the ferroelectric phase and the degradation of polarization under the repetitive switching was increased. This behavior should be closely related to the fact that the antiferroelectric phase contains mainly 180 degrees domains, which have smaller internal stresses during switching than those of 90 degrees domains. The difference of nanoscale domain structure between the antiferroelectric and ferroelectric thin films was confirmed by scanning force microscopy. (C) 1998 American Institute of Physics. [S0003-6951(98)04739-1].

引用

页码：1823 / 1825

页数：3

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