The physical reason for the apparently low deposition rate during high-power pulsed magnetron sputtering

被引：92

作者：

Emmerlich, Jens ^{[1
]}

Mraz, Stanislav ^{[1
]}

Snyders, Rony ^{[1
]}

Jiang, Kaiyun ^{[1
]}

Schneider, Jochen M. ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, D-52074 Aachen, Germany

来源：

VACUUM | 2008年 / 82卷 / 08期

关键词：

pulsed plasma; magnetron sputtering; deposition rate;

D O I：

10.1016/j.vacuum.2007.10.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In high-power pulsed magnetron sputtering, a large power density is applied giving rise to a high degree of ionization. From an application point of view, the major drawback of this technology is the considerably lower deposition rate as compared to DC magnetron sputtering. Using transport-of-ions-in-matter simulations, we show that the apparently low deposition rate can be understood based on the non-linear energy dependence of the sputtering yields. Our calculations are consistent with deposition-rate measurements on Cu films as well as with published deposition-rate data for Ti [Konstantinidis S, Dauchot JP, Ganciu M, Ricard A, Hecq M. J Appl Phys 2006;99:013307]. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：867 / 870

页数：4

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