Roughening of single-crystal silicon surface etched by KOH water solution

被引：115

作者：

Sato, K ^{[1
]}

Shikida, M

Yamashiro, T

Tsunekawa, M

Ito, S

机构：

[1] Nagoya Univ, Dept Micro Syst Engn, Nagoya, Aichi 4648603, Japan

[2] Aichi Prefectural Govt, Ind Res Inst, Kariya, Aichi 4480003, Japan

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1999年 / 73卷 / 1-2期

关键词：

single-crystal silicon surface; chemical etching; KOH water solution;

D O I：

10.1016/S0924-4247(98)00270-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated roughening of single-crystal silicon surface during chemical anisotropic etching using KOH water solution. The change in roughness strongly depends on the crystallographic orientation of the silicon. We plotted a map showing roughness distribution as a function of orientation. A smooth surface appears in a region including the (100), (211), and (311) planes. A very rough surface appears in a region including the (320) and (210) planes. It was observed that the roughened surface shows facet textures composed of certain crystallographic planes. We further studied the effects of KOH concentration and etching temperature. The roughness of (110) plane decreases with an increase in KOH concentration and is independent of the etching temperature. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：122 / 130

页数：9

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