Large-area CIGS absorbers prepared by physical vapor deposition

被引：23

作者：

Negami, T ^{[1
]}

Satoh, T ^{[1
]}

Hashimoto, Y ^{[1
]}

Nishiwaki, S ^{[1
]}

Shimakawa, S ^{[1
]}

Hayashi, S ^{[1
]}

机构：

[1] Matsushita Elect Ind Co Ltd, Adv Technol Res Labs, Seika, Kyoto 6190237, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 67卷 / 1-4期

关键词：

Cu(In; Ga)Se-2; thin film; in-line evaporation;

D O I：

10.1016/S0927-0248(00)00257-9

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

An in-line process for deposition of Cu(In,Ga)Se-2 (CIGS) films on 10 x 10 cm(2) substrates has been developed in order to fabricate high-efficiency CIGS modules. At the first step, CIGS solar cells with a small area were fabricated by the in-line evaporation. The cells on different positions in 10 x 10 cm(2) area showed almost the same efficiency of over 14%. Twelve cells on a substrate of 5 x 10 cm(2) size showed an average efficiency of about 13%. Device-quality CIGS films can be prepared by the in-line evaporation. Furthermore, interconnected CIGS submodules were fabricated on 10 x 10 cm(2) size substrates. The CIGS submodule has achieved an efficiency of 10.5%. The segmental cells in the submodule showed an average open-circuit voltage higher than 0.6 V, comparable to that of a high-efficiency cell with a laboratory size. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1 / 9

页数：9

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