Surface plasmon polariton amplification in metal-semiconductor structures

被引：47

作者：

Fedyanin, Dmitry Yu. ^{[1
]}

Arsenin, Aleksey V. ^{[1
]}

机构：

[1] State Univ, Moscow Inst Phys & Technol, Lab Nanoopt & Femtosecond Elect, Dept Gen Phys, Dolgoprudnyi 141700, Russia

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 13期

基金：

俄罗斯基础研究基金会;

关键词：

STIMULATED-EMISSION; WAVE-GUIDES; CURRENT TRANSPORT; GAIN; PROPAGATION; ABSORPTION; BARRIERS; DENSITY; SILICON; DIODE;

D O I：

10.1364/OE.19.012524

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We propose a novel scheme of surface plasmon polariton (SPP) amplification that is based on a minority carrier injection in a Schottky diode. This scheme uses compact electrical pumping instead of bulky optical pumping. Compact size and a planar structure of the proposed amplifier allow one to utilize it in integrated plasmonic circuits and couple it easily to passive plasmonic devices. Moreover, this technique can be used to obtain surface plasmon lasing. (C)2011 Optical Society of America

引用

页码：12524 / 12531

页数：8

共 36 条

[1]

Adachi S., 2009, Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors

[2] Recombination lifetime of In0.53Ga0.47As as a function of doping density [J].