Experimental investigation and simulation of hybrid organic/inorganic Schottky diodes

被引：76

作者：

Bolognesi, A

Di Carlo, A ^{[1
]}

Lugli, P

Kampen, T

Zahn, DRT

机构：

[1] Univ Roma Tor Vergata, Dipartimento Ingn Elettron, Rome, Italy

[2] Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2003年 / 15卷 / 38期

关键词：

D O I：

10.1088/0953-8984/15/38/010

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have investigated electronic transport in hybrid organic/inorganic Schottky diodes. In order to derive from basic principles the transport properties of the organic semiconductors, we have use a two-dimensional drift-diffusion simulator which properly accounts for transport in both organic and inorganic layers. We have calculated the I-V characteristics of Ag/PTCDA/GaAs Schottky diodes as a function of PTCDA thickness and compared the results with experimental in situ measurements. The interplay between barrier height, PTCDA thickness, space-charge-limited current, and image charge is outlined.

引用

收藏

页码：S2719 / S2728

页数：10

相关论文

共 27 条

[1] GaAs wafer bonding by atomic hydrogen surface cleaning [J].

Akatsu, T ;

Plössl, A ;

Stenzel, H ;

Gösele, U .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (12) :7146-7150

[2] A two-dimensional simulation of organic transistors [J].

Alam, MA ;

Dodabalapur, A ;

Pinto, MR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (08) :1332-1337

[3] CHARGE TRANSPORT IN DISORDERED ORGANIC PHOTOCONDUCTORS - A MONTE-CARLO SIMULATION STUDY [J].

BASSLER, H .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1993, 175 (01) :15-56

[4]

BASSLER H, 1999, SEMICONDUCTING POLYM

[5] Large drift-diffusion and Monte Carlo modeling of organic semiconductor devices [J].

Bolognesi, A ;

Di Carlo, A ;

Lugli, P ;

Conte, G .

SYNTHETIC METALS, 2003, 138 (1-2) :95-100

[6] Influence of carrier mobility and contact barrier height on the electrical characteristics of organic transistors [J].

Bolognesi, A ;

Di Carlo, A ;

Lugli, P .

APPLIED PHYSICS LETTERS, 2002, 81 (24) :4646-4648

[7] A new structure of In-based ohmic contacts to n-type GaAs [J].

Ding, SA ;

Hsu, CC .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1996, 62 (03) :241-245

[8] Preparation and operation of hydrogen cleaned GaAs(100) negative electron affinity photocathodes [J].

Elamrawi, KA ;

Elsayed-Ali, HE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (03) :823-831

[9] ORGANIC-ON-INORGANIC SEMICONDUCTOR CONTACT BARRIER DIODES .1. THEORY WITH APPLICATIONS TO ORGANIC THIN-FILMS AND PROTOTYPE DEVICES [J].

FORREST, SR ;

KAPLAN, ML ;

SCHMIDT, PH .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) :1492-1507

[10] ORGANIC-ON-GAAS CONTACT BARRIER DIODES [J].

FORREST, SR ;

KAPLAN, ML ;

SCHMIDT, PH ;

PARSEY, JM .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :867-870